The 65h JSAP Spring Meeting, 2018

Presentation information

Print

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[19a-E202-1~10] 15.4 III-V-group nitride crystals

Mon. Mar 19, 2018 9:00 AM - 11:45 AM E202 (57-202)

Atsushi Kobayashi(Univ. of Tokyo), Hiroto Sekiguchi(Toyohashi University of Technology)

9:30 AM - 9:45 AM

[19a-E202-3] Electronic structure analysis at threading edge dislocation in GaN

〇Takashi Nakano1, Masaaki Araidai3,2, Kenji Shiraishi3,2, Atsushi Tanaka3, Yoshio Honda3, Hiroshi Amano3 (1.Nagoya Univ., 2.Graduate School of Engineering, Nagoya Univ., 3.IMaSS, Nagoya Univ.)

Keywords:gallium nitride, dislocation