[19a-E202-1~10] 15.4 III-V-group nitride crystals

[19a-E202-4] Residual stress evaluation of GaN epitaxial layers transferred onto Si (100) substrate

〇Jianbo Liang¹, Yan Zhou², Manikant Singh², Filip Gucmann², James Pomeroy², Martin Kuball², Naoteru Shigekawa¹ (1.Osaka City Univ., 2.Univ. of Bristol)

Keywords:GaN, surface activated bonding, thin film transfer

GaN based power devices have been fabricated on SiC, sapphire, and Si substrates.¹ The output power densities of the devices are limited by the thermal conductivities of the substrate materials. If it is possible to transfer the GaN epitaxial layer onto diamond substrate with the highest thermal conductivity among materials, which would largely increase the output power density of the devices. In this work, we explored the transfer process of GaN epitaxial layer and investigated the residual stress of the GaN transferred onto Si (100) substrate.