[19a-E202-1~10] 15.4 III-V-group nitride crystals

△ [19a-E202-7] Investigation of using graded AlGaN cladding layer

〇Yuta Kawase¹, Syunya Ikeda¹, jyunya hakamata¹, takafumi hayasi¹, syo Iwayama¹, Iwaya motoaki¹, takeuchi tetsuya¹, kamiyama satoshi¹, akasaki isamu^1,2 (1.Meijo Univ., 2.Nagoya Univ.)

Keywords:AlGaN

It is difficult to realize p-type AlGaN with high AlN molar fraction and high hole concentration added with Mg in group III nitrides, and the oscillation wavelength of the edge emitting ultraviolet laser is only 326 nm.
In this research group, we also reported that by using compositionally graded AlGaN, it is useful to obtain high hole concentration at room temperature and to improve ultraviolet LED performance. In this presentation, the AlN molar fraction of the compositionally graded structure cladding layer was changed and fabricated.