Analysis of efficiency curves of InGaN-based blue light emitting diodes using rate equation for radiative and nonradiative recombination of excitons

Kazunori Shibuya; Ayumu Yoneda; Yuki Hashiguchi; Hiroyuki Miyoshi; Satoshi Kurai; Hideaki Murotani; Narihito Okada; Kazuyuki Tadatomo; Yoichi Yamada

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[19a-E202-1~10] 15.4 III-V-group nitride crystals

Mon. Mar 19, 2018 9:00 AM - 11:45 AM E202 (57-202)

Atsushi Kobayashi(Univ. of Tokyo), Hiroto Sekiguchi(Toyohashi University of Technology)

11:15 AM - 11:30 AM

[19a-E202-9] Analysis of efficiency curves of InGaN-based blue light emitting diodes using rate equation for radiative and nonradiative recombination of excitons

Kazunori Shibuya¹, Ayumu Yoneda¹, Yuki Hashiguchi¹, Hiroyuki Miyoshi¹, Satoshi Kurai¹, 〇Hideaki Murotani², Narihito Okada¹, Kazuyuki Tadatomo¹, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.NIT, Tokuyama Coll.)

Keywords:InGaN LED, internal quantum efficiency, rate equation