[19a-F104-1~10] 9.2 Nanowires and Nanoparticles

[19a-F104-1] Electrical performance improvement of InAs/InP nanowire telecom-band LED

〇Guoqiang Zhang^1,2, Masahito Takiguchi^1,2, Kouta Tateno^1,2, Takehiko Tawara^1,2, Masaya Notomi^1,2, Hideki Gotoh¹ (1.NTT BRL, 2.NTT NPC)

Keywords:semiconductor, nanowire, diode

Telecom-band light sources are extremely important for optical data communication. Semiconductor nanowires offer the possibility of enhancing the degree of freedom for 3D integration and enduring large lattice mismatch for breaking the limitation of material combination. Hence they are being extensively studied in optoelectronic devices. Recently, we have demonstrated telecom-band nanowire LEDs operating at room temperature by using multi-stacked InP/InAs heterostructure nanowires. The diode shows relatively high reverse current (mA level at -1 V). Here we report how to clarify the mechanism and then reduce the reverse current by modifying the nanowire structure.