[19a-F202-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [19a-F202-1] Investigation on p-BaSi₂/n-Si heterojunction solar cells using a Si(001) substrate

〇Tianguo Deng¹, Takuma Sato¹, Zhihao Xu¹, Ryota Takabe¹, Suguru Yachi¹, Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

Keywords:barium disilicide

B-doped p-BaSi₂ epitaxial layers with a hole concentration of 1.1 ´ 10¹⁸ cm^-3 were grown on n-Si(001) (resistivity ρ = 1–10 Ωcm) by molecular beam epitaxy to form p-BaSi₂/n-Si heterojunction solar cells. The p-BaSi₂ layer thickness (d) were varied from 20 to 60 nm to investigate its effect on solar cell performance. The conversion efficiency (h ) increased with d, reached a maximum of 9.8% at d = 40 nm, and degraded for larger d, indicating that a Si(001) surface shows promise for BaSi₂ solar cells.