Control of initial process in BaSi<sub>2</sub> thermal evaporation for p-type BaSi<sub>2</sub>/n-type crystalline Si solar cells with high open-circuit voltage

Michinobu Fujiwara; Kazuma Takahashi; Yoshihiko Nakagawa; Kazuhiro Gotoh; Yasuyoshi Kurokawa; Takashi Itoh; Noritaka Usami

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[19a-F202-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 19, 2018 9:30 AM - 12:15 PM F202 (61-202)

Haruhiko Udono(Ibaraki Univ.), Yoshikazu Terai(Kyushu Inst. of Tech.)

10:00 AM - 10:15 AM

[19a-F202-3] Control of initial process in BaSi₂ thermal evaporation for p-type BaSi₂/n-type crystalline Si solar cells with high open-circuit voltage

〇(M1)Michinobu Fujiwara¹, Kazuma Takahashi¹, Yoshihiko Nakagawa¹, Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Takashi Itoh¹, Noritaka Usami¹ (1.Nagoya Univ.)

Keywords:semiconductor, siliside, solar cell

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Presentation information

[19a-F202-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

[19a-F202-3] Control of initial process in BaSi2 thermal evaporation for p-type BaSi2/n-type crystalline Si solar cells with high open-circuit voltage

[19a-F202-3] Control of initial process in BaSi₂ thermal evaporation for p-type BaSi₂/n-type crystalline Si solar cells with high open-circuit voltage