The Influence of Si in Ni on the Band Alignment between Ni and Alumina

Michiko Yoshitake; Slavomir Nemsak; Tomas Skala; Nataliya Tsud; Vladimir Matolin; Kevin Prince

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.5 Surface Physics, Vacuum

[19a-F214-1~11] 6.5 Surface Physics, Vacuum

6.5と7.6のコードシェアセッションあり

Mon. Mar 19, 2018 9:15 AM - 12:15 PM F214 (61-214)

Azusa Hattori(Osaka Univ.), Satoru Ichinokura(NIMS)

11:45 AM - 12:00 PM

[19a-F214-10] The Influence of Si in Ni on the Band Alignment between Ni and Alumina

〇Michiko Yoshitake¹, Slavomir Nemsak^1,4, Tomas Skala², Nataliya Tsud³, Vladimir Matolin², Kevin Prince² (1.NIMS, 2.Elettra, 3.Charles Univ, 4.PGI)

Keywords:band alignment, interface bonding, additional element

The influence of a small amount of Si in Ni single crystal on the interface formation between oxide and Ni has been investigated. The interface was formed by in-situ growth of the oxide by simultaneous supply of Al and oxygen onto Ni (111) in a ultrahigh vacuum chamber equipped with XPS apparatus.