Analysis of Cesium Layer on InGaN by Temperature Programmed Desorption Method

Masahiro Kashima; Sato Daiki; Koizumi Atsushi; Nishitani Tomohiro; Honda Yoshio; Amano Hiroshi; Iijima Hokuto; Meguro Takashi

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.5 Surface Physics, Vacuum

[19a-F214-1~11] 6.5 Surface Physics, Vacuum

6.5と7.6のコードシェアセッションあり

Mon. Mar 19, 2018 9:15 AM - 12:15 PM F214 (61-214)

Azusa Hattori(Osaka Univ.), Satoru Ichinokura(NIMS)

11:15 AM - 11:30 AM

[19a-F214-8] Analysis of Cesium Layer on InGaN by Temperature Programmed Desorption Method

〇Masahiro Kashima¹, Sato Daiki², Koizumi Atsushi², Nishitani Tomohiro³, Honda Yoshio⁴, Amano Hiroshi⁴, Iijima Hokuto¹, Meguro Takashi¹ (1.Tokyo University of Science, 2.Photo electron Soul INC, 3.Institute for Advanced Research Nagoya University, 4.Institute of Materials and Systems for Sustainability Nagoya University)

Keywords:semiconductor photocathode, negative electron affinity, InGaN