[19a-F310-1~8] 13.9 Compound solar cells

[19a-F310-8] Evaluation of bonded GaAs/Si and GaN/GaAs wafers

〇(M1)Yuki Nakamura¹, Yoshiaki Ajima¹, Kenta Murakami¹, Hideo Teramoto¹, Ryota Jomen¹, Xing Zhiwei², Pan Dai², Shulong Lu², Shiro Uchida¹ (1.Chiba Institute of Technology, 2.Suzhou Institute of Nano-tech and Nano-bionics)

Keywords:room-temperature wafer bonding, GaAs/Si, GaN/GaAs

In order to improve a photocurrent of the photo-electrode in a photosynthetic system, multi-junction solar cell structures such as InGaN/GaInP/GaAs and GaInP/GaAs/Si are promising.For a realization of those structures, we fabricated GaN/GaAs and GaAs/Si bonded samples by using a room-temperature wafer bonding technique, and evaluated the interface resistances.We found that both those samples exhibited the ohmic like I-V curve, leading to the fabrication of those structure with low series resistances.