11:30 AM - 11:45 AM
[19a-F310-8] Evaluation of bonded GaAs/Si and GaN/GaAs wafers
Keywords:room-temperature wafer bonding, GaAs/Si, GaN/GaAs
In order to improve a photocurrent of the photo-electrode in a photosynthetic system, multi-junction solar cell structures such as InGaN/GaInP/GaAs and GaInP/GaAs/Si are promising.For a realization of those structures, we fabricated GaN/GaAs and GaAs/Si bonded samples by using a room-temperature wafer bonding technique, and evaluated the interface resistances.We found that both those samples exhibited the ohmic like I-V curve, leading to the fabrication of those structure with low series resistances.