[19a-G203-1~9] 13.5 Semiconductor devices and related technologies

[19a-G203-3] Silicon Tunnel Field-Effect Transistors as Spin Qubits

〇Takahiro Mori¹, Satoshi Moriyama², Takashi Matsukawa¹, Tetsuji Yasuda¹, Keiji Ono³ (1.AIST, 2.NIMS, 3.RIKEN)

Keywords:Tunnel field-effect transistor, Qubit

Tunnel field-effect transistors (TFETs) with an isoelectronic trap (IET), which have been proposed and developed by AIST, were successfully operated as spin qubits for the first time. The operation temperature was up to 5 K, that is record operation temperature of spin qubits based on electronic devices.