09:30 〜 11:30
▲ [19a-P3-1] New design of GaAs based THz-QCL for obtaining high optical gain by indirect-injecting asymmetric-wells superlattice structure
キーワード：terahertz, quantum cascade laser
we propose a new design of THz-QCL based on GaAs/AlGaAs superlattice by two-wells indirect injecting scheme to obtain high optical gain at high operating temperature. The upper lasing well is Al-contained Al0.06Ga0.94As and the lower lasing well is GaAs. we use NEGF method to simulate the properties of this new design. it shows that with this structure multi-periods current leakage is inhibited. Compared to the designs using resonant tunneling (RT) and LO phonon depopulation scheme which realizes the world record operating temperature of 199.5K, an improvment of optical gain from 59cm-1 to 74cm-1 has been obtained at 200K. Also much smaller threshold current (700A/cm2) and larger lasing dynamci range (600A/cm2) are found.