[19a-P4-1~8] 15.7 Crystal characterization, impurities and crystal defects

[19a-P4-4] Observation of strain field in Al ion-implanted silicon carbide crystals by reciprocal space mapping and angle-resolved X-ray topography

〇Yumiko Takahashi¹, Keiichi Hirano², Takayoshi Shimura³, Shinji Nagamachi⁴ (1.Nihon Univ., 2.KEK-PF, 3.Osaka Univ., 4.Nagamachi Science Laboratory Co., Ltd.)

Keywords:topography, reciprocal space mapping, SiC

Grazing incidence angle-resolved synchrotron X-ray topography and reciprocal space mapping have been used to observe ion-implanted 4H-SiC epitaxial wafers. In the ion implanted sample, diffuse scattering which is not observed in the non-implanted sample is observed by reciprocal lattice space mapping, which is considered to be deterioration of crystallinity due to the ion implantation process.