[19a-P4-1~8] 15.7 Crystal characterization, impurities and crystal defects

[19a-P4-5] XAFS analysis of photochromic ZnO thin film

〇Hiroki Uyama¹, Hiroshi Kajiyama¹, Shin Kuboyama², Kiichiro Uchino², Shuhei Inoue³, Keiji Takata⁴ (1.Tokushima Bunri Univ., 2.Kyushu Univ., 3.Hiroshima Univ., 4.Kansai Univ.)

Keywords:ZnO, plasma-assisted chemical vapor deposition, photochromic transition

The ZnO thin film synthesized by the VHF plasma CVD method undergoes photochromic (PC) transition by UV irradiation. Development of all solid secondary batteries using this PC transition has been advanced. In this study, the local structure was investigated by XAFS analysis in order to specify the crystal requirements necessary for PC transition. As a result, it became clear that the interatomic distance and the Debye-Waller factor of PC transitioned ZnO thin films were different from those of high purity standard samples.