[19a-P4-1~8] 15.7 Crystal characterization, impurities and crystal defects

[19a-P4-6] Deep Level Characterization Improved by Laplace Charge Transient Spectroscopy

〇(D)Shunpei Koike¹, Kazuo Uchida¹, Shinji Nozaki¹ (1.Univ. Electro-Communications)

Keywords:deep level characterization, charge transient spectroscopy, Laplace charge transient spectroscopy

We report deep-level characterization improved by Laplace charge transient spectroscopy (L-QTS). The L-QTS enables us to resolve closely-spaced energy levels of deep levels in semiconductors. The conventional QTS is significantly influenced by the time constant of the integrator in the QTS circuit and diode leakage current and often results in erroneous information on the deep levels. We have a developed algorithm to remove their influence and obtain only the transient signal resulting from the emission of electrons/holes from the deep-level impurities. The obtained transient signal is suitable for the high-resolution deep-level analysis by the inverse Laplace transform.