[19a-P6-1~79] 17 Nanocarbon Technology（Poster）

[19a-P6-3] Molecule Doping on MoS₂-FET

〇Tsuyoshi Takaoka¹, Trung Nguyen Tat², Ippei Tsukamoto², Iftekhar Md. Alam², Md. Ikram Hosain², Kazuki Washida², Atsushi Ando³, Tadahiro Komeda¹ (1.IMRAM, Tohoku Univ., 2.Chem.,Tohoku Univ., 3.AIST)

Keywords:semiconductor, FET, molecular adsorption

Atomic scale layer of transition dichalcogenide including MoS₂ has attracted attentions for the field emission transistor material due to its genuine semiconductor nature. The strategy for the doping should be different from the conventional Si MOSFET fabrication and adsorption of molecules can be one of techniques to place dopants. Even though preliminary investigations revealed that there is a doping effect in FET characteristics if the channel is exposed to gas molecules, there is no systematic study how the doping is achieved with such a condition. In this report we measured the effect of Cl₂ molecule adsorption on the FET properties without exposing the channel to the air.