[19a-P6-1~79] 17 Nanocarbon Technology（Poster）

[19a-P6-8] Fabrication and device properties of TMDC-SWCNT stacked heterostructures

〇Chiho koyanagi¹, Kenshiro Suenaga¹, Kenji Kawahara², Tsuyoshi Saito³, Takeshi Tanaka³, Hiromichi Kataura³, Hiroki Ago^1,2 (1.Kyushu Univ., 2.kyushu Univ. GIC, 3.AIST)

Keywords:transition metal chalcogenides, carbon nanotubes, two-dimensional materials

Recently TMDC materials with atomically thin structure are actively studied due to their novel property. In this work, we fabricated field effect transistor using two-dimensional TMDC materials and one-dimensional SWNT as n- and p-type materials respectively.