[19p-C102-1~9] Recent progresses in development of electron sources and their novel applications

[19p-C102-9] Radiation tolerance of image sensor with field emitter array and photoconductor

〇Yasuhito Gotoh¹, Teruyuki Morito¹, Masayoshi Nagao², Tomoaki Masuzawa³, Yoichiro Neo³, Hidenori Mimura³, Tamotsu Okamoto⁴, Tomoya Igari⁴, Masafumi Akiyoshi⁵, Nobuhiro Sato¹, Ikuji Takagi¹ (1.Kyoto Univ., 2.AIST, 3.Shizuoka Univ., 4.NIT, Kisarazu College, 5.Osaka Pref. Univ.)

Keywords:field emitter array, image sensor, radiation

Radiation tolerance of the image sensor with field emitter array and CdTe based photoconductor was investigated. Both of the field emitter array and CdTe based photoconductor showed little change in theeir characteristics even after the gamma-ray irradiation to the absorbed dose of 1.2 MGy. An image sensor test tube was constructed, and it was found it could obtain photo-signal even after the gamma-ray irradiation to the absorbed dose of 1 MGy. The field emitter array did not show signficant change in its current-voltage characteristics under the irradiation of high energy x-ray with the absorbed dose rate of 1.2 kGy/h.