[19p-C103-1~8] Advanced 3D atomic imaging to develop new materials and devices technologies

[19p-C103-5] Structural Analysis of In atoms in InGaN Layers with using X-ray Fluorescence Holography Technique

〇Tomoaki Kawamura¹, Koichi Hayashi² (1.Nichia Corp., 2.Nagoya Inst. Tech.)

Keywords:x-ray holography technique, nitride semiconductor, local strictire analysis

One of the important industrical application of "Advanced 3D Atomic Imaging", we present the results of local strucutre analysis of indium atoms in the MQW InGaN/GaN layers with using x-ray fluorescence holography technique. The results show that specular semi-stable In/Ga sites exit over several unit cells, which cluold not be obtained by the ordinal-analysis techniques, suggesting effectiveness of this technique for mid-range strucutue analysis.