4:30 PM - 4:45 PM
▲ [19p-C202-10] [Young Scientist Presentation Award Speech] Interface traps “extrinsically” deliver MIT in monolayer MoS2 FET
Keywords:MIT, MoS2 FET, quantum capacitance
The electrostatic field-effect control of carriers determines most of the device characteristics and needs to be fully understood before exploring the underlying physics in the electrical transport properties, for example, metal-insulator-transition (MIT) in MoS2 and other 2D materials. As for monolayer MoS2, the carrier modulation by the gate is mainly determined by the following two factors, in addition to the geometric capacitance (Cox). Intrinsically, it is limited by the quantum capacitance (CQ), which comes from low density of states (DOS) of MoS2 and Fermi-Dirac distribution. Extrinsically, it is also severely affected by the interface trap capacitance (Cit = e2Dit). Therefore, by intensively investigating the high-k/MoS2 interface properties by C-V measurement so far, we have elucidated all the constituents of the total capacitance (1/Ctotal=1/Cox+1/(CQ+Cit) and then evaluated the band tail energy distribution of Dit with the lowest value of 8´1011 cm-2eV-1
In this talk, on the basis of well extracted CQ and Cit, we first reproduce MIT in I-V characteristics by utilizing the drift current model. Then, through this modeling, we would like to indicate that the origin of MIT is external outcome resulting from Cit.
In this talk, on the basis of well extracted CQ and Cit, we first reproduce MIT in I-V characteristics by utilizing the drift current model. Then, through this modeling, we would like to indicate that the origin of MIT is external outcome resulting from Cit.