[19p-C202-1~17] 17.3 Layered materials

[19p-C202-8] Study on MoS₂ thin-film electric double-layer transistors using ESR spectroscopy

〇Naho Tsunetomo¹, Shohei Iguchi¹, Yousang Won¹, Sinae Heo^2,3, Yesul Jeong², Yutaka Wakayama^2,3, Kazuhiro Marumoto^1,4 (1.Univ. Tsukuba, 2.NIMS, 3.Kyushu Univ., 4.TREMS, Univ. Tsukuba)

Keywords:MoS2, electron spin resonance, transistor

Transistor materials with low power consumption such as graphene have been extensively studied. Among them, a transition-metal dichalcogenide (TMD) MoS₂ has attracted much attention as a post-graphene material. MoS₂ has a two-dimensional structure such as graphene and has a band gap which is not present in graphene, which makes it possible to fabricate a transistor with high on/off ratio and mobility. However, the detailed conduction mechanism has not yet been studied from a microscopic viewpoint. In this study, we report the fabrication of the field-effect transistors (FETs) with MoS₂ thin films and the study of the conduction mechanism using electron spin resonance (ESR) spectroscopy from a microscopic viewpoint. The transistor showed n-type transfer characteristic. The ESR spectra showed two types of signals with Curie-like temperature dependence for the ESR intensity. One has a lower g factor, which didn’t show temperature dependence. The other has a higher g factor, which increased as temperature decreased. The detailed conduction mechanism is discussed on the basis of the ESR signals.