[19p-C301-1~17] 3.11 Photonic structures and phenomena

[19p-C301-5] Nanophotonic detector-modulator integration with a femto-farad capacitance

〇Kengo Nozaki^1,2, Shinji Matsuo^1,3, Takuro Fujii^1,3, Koji Takeda^1,3, Akihiko Shinya^1,2, Eiichi Kuramochi^1,2, Masaya Notomi^1,2 (1.NTT NPC, 2.NTT BRL, 3.NTT DTL)

Keywords:photonic crystal, photodetector, modulator

Close integration of ultrasmall photodetector and electro-absorption modulator based on photonic crystal configures O-E-O device, and the fJ/bit-energy wavelength conversion was demonstrated. This energy is about two orders of magnitude lower than those of the previous O-E-O devices, and thereby experimentally reveals the first evidence of the opto-electronic integration with a femto-farad capacitance level.