[19p-D101-1~11] Women in Photovoltaics at JSAP

[19p-D101-5] Si surface passivation by triode-type plasma-enhanced CVD with thermally-energized film-precursors

〇Chisato Niikura¹, Shinsuke Miyajima² (1.Natl. Inst. for Mater. Sci., 2.Tokyo Tech)

Keywords:passivation, heterojunction solar cells, silicon

Highly-efficient surface passivation is required for next-generation very-thin Si solar cells. For further developing the passivation technique, in this study, we prepared hydrogenated amorphous Si passivation layers, for the first time, using triode-type plasma-enhanced CVD with gas heating. Low surface recombination velocity values obtained for the samples suggest the effectiveness of the technique.