Theoretical Analysis of Carrier Lifetimes in SiC by using Rate Equations

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 19, 2018 1:30 PM - 6:00 PM D103 (56-103)

Toshiyuki Isshiki(Kyoto Inst. Tech.), Johji Nishio(Toshiba)

4:30 PM - 4:45 PM

〇Shoma Yamashita¹, I. D. Booker¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:silicon carbide, carrier lifetime, Z1/2 center