The 65h JSAP Spring Meeting, 2018

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[19p-D103-1~17] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 19, 2018 1:30 PM - 6:00 PM D103 (56-103)

Toshiyuki Isshiki(Kyoto Inst. Tech.), Johji Nishio(Toshiba)

5:00 PM - 5:15 PM

[19p-D103-14] Surface recombination velocity for the non-polar face of 4H-SiC

〇Xinchi Zhang1, Kouyou Kohama1, Masaya Ichimura1, Masashi Kato1 (1.NIT)

Keywords:semiconductor, SiC, surface recombination velocity