[19p-D103-1~17] 15.6 Group IV Compound Semiconductors (SiC)

[19p-D103-15] Temperature Dependence of the Carrier Lifetimes in 4H-SiC Epitaxial Layers

〇Mitsuhiro Kushibe¹, Akira Miyasaka^2,3, Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹, Kazutoshi Kojima³, Tomohisa Kato³, Hajime Okumura³ (1.Toshiba Corporation, 2.SHOWA DENKO K.K., 3.Advanced Industrial Science and Technology)

Keywords:SiC, Carrier lifetime, Temperature dependence

For the evaluation of the temperature dependence of the carrier lifetime as the material preoperty of 4H-SiC, the carrier lifetimes of the 4H-SiC epitaxial layers of various thicknesses were measured at various temperatures. The discrepancey between the carrier lifetime of the material and the measured carrier lifetime became larger at the higher measurement temperature.