[19p-D103-1~17] 15.6 Group IV Compound Semiconductors (SiC)

[19p-D103-17] Influence of N Codoping on Resistivity in Heavily Al-doped p-type 4H-SiC

〇Atsuki Hidaka¹, Akinobu Takeshita¹, Tatsuya Imamura¹, Kota Takano¹, Kazuya Okuda¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.OECU, 2.AIST)

Keywords:p-type 4H-SiC, Temperature-dependent resistivity, Conduction mechanism

To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is required to reduce the resistance in thick p⁺-type SiC substrate that is a collector of n-channel IGBTs and to obtain high quality crystal. It is reported that codoping of Al and N in heavily Al-doped p-type 4H-SiC can form high quality epilayers. In this study, electrical properties of Al-N codoped p-type 4H-SiC epilayers are investigated. It is found that the codoping of N makes nearest-neighbor hopping conduction dominant at temperatures higher in the singly-doped samples.