Reaction Pathway Analysis for Conversion of Screw Basal Plane Dislocation to Threading Edge Dislocation in 4H-SiC

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 19, 2018 1:30 PM - 6:00 PM D103 (56-103)

Toshiyuki Isshiki(Kyoto Inst. Tech.), Johji Nishio(Toshiba)

2:00 PM - 2:15 PM

〇Yohei Tamura¹, Hiroki Sakakima¹, Asuka Hatano¹, Satoshi Izumi¹ (1.Univ. of Tokyo)

Keywords:SiC, dislocation, BPD