[19p-D103-1~17] 15.6 Group IV Compound Semiconductors (SiC)

△ [19p-D103-8] Nitrogen doping in 4H-SiC by laser ablation of a SiNx film

〇Toshifumi Kikuchi^1,2, Kaname Imokawa^1,2, Akihiro Ikeda¹, Daisuke Nakamura¹, Tanemasa Asano¹, Hiroshi Ikenoue^1,2 (1.ISEE, Kyushu Univ., 2.NEXT GLP, Kyushu Univ.)

Keywords:4H-SiC, power device, laser doping

Silicon carbide is well known wide bandgap semiconductor and superior material properties. However, fabrication cost of SiC power devices such as SiC diode and MOS-FETs become very high, because high temperature ion implantation and annealing are needed for doping. Therefore, low-temperature process for doping are needed for spread of SiC power devices.We propose a novel method of low-temperature nitrogen doping into 4H-SiC(0001) induced by KrF excimer laser irradiation to a SiNx/4H-SiC(0001) substrate in oxygen-free ambient. We have developed a high throughput laser doping system with a inert noble gas nozzle, a high speed stage and a high repetition rate laser source, which systems can be controlled by a control PC. We will report that nitrogen doping properties and electro characteristics of power devices fabricated by the high throughput laser doping system.