[19p-D104-1~6] CS6 10.1 新物質・新機能創成（作製・評価技術）,10.2 スピン基盤技術・萌芽的デバイス技術,10.3 スピンデバイス・磁気メモリ・ストレージ技術のコードシェアセッション

▲ [19p-D104-6] Magnetoresistance in a nonmagnet/antiferromagnet metallic heterostructure

〇(P)Samik Duttagupta¹、Aleksandr Kurenkov⁴、Ryuichi Itoh⁴、Chaoliang Zhang³、Shunsuke Fukami²、Hideo Ohno⁵ (1.CSRN, Tohoku Univ、2.CIES, Tohoku Univ、3.CSIS, Tohoku Univ、4.RIEC, Tohoku Univ、5.WPI-AIMR)

キーワード：Antiferromagnet Spintronics, Spin-Hall Magnetoresistance, Spin-orbit interaction

Utilization of antiferromagnets (AFMs) as active components of spintronic devices offers several unique advantages which complement current ferromagnet (FM) based devices. The injection of current in nonmagnet (NM)/AFM heterostructures results in magnetoresistive effects owing to spin-orbit torques (SOTs). Experimental investigations concerning spin current injection and manifestations of SOTs are expected to provide key insights into pertinent questions concerning manipulation and detection of AFM moments. Here, we study current-induced magnetoresistive effects in a non-collinear AFM Pt/PtMn symmetric heterostructure.