[19p-E202-1~8] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors: How far can we control the defects? Advanced characterization and functional exploration

[19p-E202-3] Structural Defects and Composition Fluctuation of GaN-based Alloy Semiconductor

〇Shigetaka Tomiya¹, Yuya Kanitani¹ (1.Sony)

Keywords:Nitride Semiconductors, Defects, Transmission Electron Microscopy

In this presentation, we show examples of analysis of structural defects and composition fluctuations observed in GaInN alloy semiconductors and/or Mg-doped GaN epitaxial films by transmission electron microscopy and three-dimensional atom probe tomography. We, then, discuss current issues and prospects on control of defects in nitride semiconductors while comparing with other semiconductor materials.