The 65h JSAP Spring Meeting, 2018

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Symposium (Oral)

Symposium » Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors: How far can we control the defects? Advanced characterization and functional exploration

[19p-E202-1~8] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors: How far can we control the defects? Advanced characterization and functional exploration

Mon. Mar 19, 2018 1:30 PM - 5:30 PM E202 (57-202)

Akira Sakai(Osaka Univ.), Akira Uedono(Tsukuba Univ.)

3:30 PM - 4:00 PM

[19p-E202-5] GaN crystal growth technique by Na flux method for reducing dislocation

〇Yusuke Mori1, Masayuki Imanishi1, Mamoru Imade1, Masashi Yoshimura1,2 (1.Osaka Univ., 2.ILE, Osaka Univ.)

Keywords:GaN crystal