[19p-F102-1~9] Progress in Materials and Devices Technology for Advanced Use of Renewable Energy

△ [19p-F102-3] Electrochemical redox behavior of acceptor-doped TiO₂ thin films

〇(DC)Akihiro ISHII¹, Itaru Oikawa¹, Hitoshi Takamura¹ (1.Tohoku Univ.)

Keywords:TiO2, ReRAM, Redox

A resistive random access memory (ReRAM), which works by formation and rupture of conductive nanofilaments, has attracted attention as a next generation energy-saving memory with zero standby power consumption; however, its high switching voltage is problematic. In this study, the ReRAM composed of TiO₂ thin films were fabricated. Its switching voltage was reduced by acceptor doping leading the formation of oxygen vacancies. DFT calculation suggests the decrease of oxygen-vacancy-formation enthalpy by acceptor doping.