16:40 〜 17:10
▲ [19p-G203-7] Spin-dependent transport in ferromagnet-germanium structures for spintronic applications
キーワード：spintronics
Although spintronic technologies in both n-type and p-type Ge should be explored for novel information storage and logic devices, the detection of the two-terminal local magnetoresistance effect in ferromagnet-Ge structures has not been reported yet.
In this talk, I present reliable room-temperature magnetoresistance data in ferromagnet-Ge structures. The works on n-Ge and p-Ge will pave a way for integration of the nonvolatile memory effect in ferromagnetic materials with Ge electronics.
In this talk, I present reliable room-temperature magnetoresistance data in ferromagnet-Ge structures. The works on n-Ge and p-Ge will pave a way for integration of the nonvolatile memory effect in ferromagnetic materials with Ge electronics.