[19p-P10-1~6] 15.5 Group IV crystals and alloys

[19p-P10-3] Critical layer thickness of strained Si with (110) surface orientation

〇Keisuke Arimoto¹, Atsushi Onogawa¹, Takane Yamada¹, Kosuke Hara¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹ (1.Univ. of Yamanashi)

Keywords:strained Si

Strained Si thin film with the (110) surface orientation is a promising candidate as a material for high performance electronic devices because of high hole mobility. To realize higher carrier mobility and high On/Off ration in transistor operations, adequate strained Si layer thickness is desirable because it suppresses amplitude of wave function in SiGe layer. In this study, we investigated the critical layer thickness of strained Si thin film in a “strained Si/compositionally uniform SiGe/compositionally graded SiGe/Si(110)” structure.