The 65h JSAP Spring Meeting, 2018

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Poster presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[19p-P10-1~6] 15.5 Group IV crystals and alloys

Mon. Mar 19, 2018 4:00 PM - 6:00 PM P10 (P)

4:00 PM - 6:00 PM

[19p-P10-6] Fabrication of Al2O3/strained Ge channel structure by MBE and ALD and electrical characterizations

〇(M2)Keijiro Sato1, Eriko Shigesawa1, Hiroto Iwanaga1, Myronot Maksym2, Kentaro Sawano1 (1.Tokyo City Univ., 2.Warwick Univ.)

Keywords:strained ge MOSFET