[19p-P11-1~31] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-P11-20] Electrical Characterization of β-Ga₂O₃ Homo-Epitaxial Films Grown by Halide Vapor Phase Epitaxy

〇Yoshitaka Nakano¹ (1.Chubu Univ.)

Keywords:gallium oxide, deep-level defects, homo-epitaxial

Steady-state photo-capacitance spectroscopy measurements were performed to investigate deep-level defects in β-Ga₂O₃ homo-epitaxial films grown by halide vapor phase epitaxy. Five defect levels with positive photo-capacitance states and one defect level with a negative photo-capacitance state were revealed to be located at 1.75, 2.12, 2.78, 3.18, 3.87eV below the conduction band and at 3.71eV above the valence band, respectively. In Particular, the Ec-3.87eV level is probably associated with some kind of surface defects.