The 65h JSAP Spring Meeting, 2018

Presentation information

Poster presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-P11-1~31] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Mar 19, 2018 4:00 PM - 6:00 PM P11 (P)

4:00 PM - 6:00 PM

[19p-P11-6] The influence of argon gas on the spatial distribution of electrical and structural properties in transparent conductive Al-doped ZnO polycrystalline films deposited by magnetron sputtering

Junichi Nomoto1, Hisao Makino1, Tetsuya Yamamoto1 (1.Research Inst. Kochi Univ. Tech.)

Keywords:transparent conducting film, ZnO