[19p-P11-1~31] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-P11-9] Growth of α-(Al_xGa_1-x)₂O₃ on r- and-m-plane sapphire substrates

〇Yasuhisa Masuda¹, Takayuki Uchida², Kentaro Kaneko², Shizuo Fujita² (1.Faculty of Eng., Kyoto Univ., 2.Graduate school of Eng., Kyoto Univ.)

Keywords:semiconductor