[19p-P4-1~15] 6.2 Carbon-based thin films

[19p-P4-12] Characterization of diamond Schottky barrier diodes fabricated on mosaic wafers

〇Shinya Ohmagari¹, Hideaki Yamada¹, Hitoshi Umezawa¹, Nobuteru Tsubouchi¹, Akiyoshi Chayahara¹, Akinori Seki², Fumiaki Kawai², Hiroaki Saitoh², Yoshiaki Mokuno¹ (1.AIST ADPERC, 2.Toyota Motor Corp.)

Keywords:diamond, schottky diode, wafer

Diamond mosaic substrates in which several seed crystals are connected laterally by chemical vapor deposition (CVD), are promising large-scale wafers for device fabrication. High-quality void-free wafers with 40x60 mm² dimension were successfully developed. In this study, pseudo-vertical schottky barrier diodes (SBD) were firstly tested on mosaic wafers. On boundary region where identical substrates are connected, non-uniform crystallinity represented by defects may degrade switching performance. Contrarily, our SBD showed excellent characteristics, on/off ratio over 8 digits, electric field strength of 4 MV/cm, regardless of the existence of boundary. These results ensure the high potential of mosaic diamond wafers suitable for power device applications.