1:30 PM - 3:30 PM
[19p-P5-15] Analysis of resistive switching mechanism in polycrystalline HfO2 by using first-prinsiples calculation
Keywords:ReRAM, HfO2, first principles calculation
We analyzed surface energies of the several orientations and effects of oxygen vacancies in polycrystalline HfO2 that is used Resistive Random Access Memory (ReRAM) by using first-principles calculation. HfO2 (110) has the lowest surface energy in surfaces vertical to the HfO2 (-111), suggesting that HfO2 (110) is the most possible diffusion and cohesion surface for oxygen vacancies. Oxygen vacancies are tend to be formed near the HfO2 (110) surface and influence electric conduction in the surfaces. Therefore, oxygen vacancies cause resistive switching by diffusing and cohering in polycrystalline HfO2.