[19p-P5-1~39] 6.3 Oxide electronics

[19p-P5-33] Capacitance Device of Amorphous WO_3-x by Redox Reaction

Takahiro Sakai¹, Ten Sugimoto¹, Hiroshi Hayashi¹, Makoto Minohara², Hiroshi Kumigashira², 〇Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.PF, KEK)

Keywords:Oxide Ionic Conductor

We have prepared Amorphous WO_3-x thin film with Pt cross-point structure by RF magnetron sputteirng and characterized its structural and ionic conductivity. Furthemore, the change of capacitance was mesured by applying voltage on the basis of atomic switching phenomena with Redox reaction.