[19p-P5-1~39] 6.3 Oxide electronics

[19p-P5-8] Strain Effect and Electrical Property of Nd_0.6Sr_0.4FeO_3-δ Thin Film

〇(M2)Wataru Namiki¹, Makoto Takayanagi^1,2, Takashi Tsuchiya², Makoto Minohara³, Koji Horiba³, Hiroshi Kumigashira³, Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.NIMS, 3.KEK)

Keywords:oxide thin film, electronic structure

In our group, Nd_1-xSr_xFeO_3-δ (NSFO) polycrystal prepared using solid phase reaction method was investigated the effect of Sr substitution for NdFeO₃ in term of electrical property and electronic structure. Furthermore, NSFO (x=0.4) thin film was deposited using radio frequency magnetron sputtering. This report about the fabrication of NSFO thin film has not been reported except for our group, indicating that this is the first report. The different properties between polycrystal and thin film exhibits, which indicates there is strain effect in the thin film due to lattice mismatch between NSFO and substrate. Since the density of state of valence band and Fermi level locates the higher energy side under conduction band, the kind of carrier may be changed.