The 65h JSAP Spring Meeting, 2018

Presentation information

Poster presentation

6 Thin Films and Surfaces » 6.4 Thin films and New materials

[19p-P6-1~17] 6.4 Thin films and New materials

Mon. Mar 19, 2018 1:30 PM - 3:30 PM P6 (P)

1:30 PM - 3:30 PM

[19p-P6-11] Preparation of AlN thin films on natural expanded graphite sheet

Hoshito Murakawa1, Kosei Yamaguchi1, Takashi Inoue2, Hiroshi Okano1 (1.National Institute of Technology, Kagawa College, 2.Toyo Tanso Co.,Ltd.)

Keywords:aluminum nitride, natural expanded graphite sheet

We are studying LED devices using natural expanded graphite sheet (graphite sheet) as substrate. We have reported that GaN crystals grown on graphite sheet by MBE method emit PL light. However, the emission intensity is weaker than when sapphire is used as a substrate. In order to improve the performance, it is necessary to improve the crystal quality of GaN. In this study, AlN was fabricated on graphite sheets prepared under various conditions and evaluated as a buffer layer.