The 65h JSAP Spring Meeting, 2018

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6 Thin Films and Surfaces » 6.3 Oxide electronics

[20a-C102-1~12] 6.3 Oxide electronics

Tue. Mar 20, 2018 9:00 AM - 12:15 PM C102 (52-102)

Akira Chikamatsu(Univ. of Tokyo)

9:45 AM - 10:00 AM

△ [20a-C102-4] Time response to the Pulse Gate Voltage in VO2–Channel Metal-Insulator Transition FET

〇Yusai Wakafuji1, Takeaki Yajima1, Tomoki Nishimura1, Akira Toriumi1 (1.The Univ. of Tokyo)

Keywords:VO2, Metal Insulator Transition, Mott Transistor