[20a-D102-1~11] 12.4 Organic light-emitting devices and organic transistors

[20a-D102-8] Degradation process of pentacene-based transistors investigated by three-terminal displacement current measurement: Evaluation of rate constant of trap formation

〇Yuya Tanaka^1,2, Kohei Yamamoto², Yutaka Noguchi⁴, Hisao Ishii^1,2,3 (1.CFS, Chiba Univ., 2.AIS, Chiba Univ., 3.MCRC, Chiba Univ., 4.Meiji Univ.)

Keywords:capacitance-voltage measurement, organic field-effect transistor, degradation

We have evaluated pentacene-based organic field-effect transistors (Pn-FETs) by three-terminal displacement current measurement (TT-DCM) and reported that the trapped holes are formed by keeping Pn molecules as unstable cation during transistor operation. In this study, we developed simple model for the trap formation based on these results. Finally, a rate constant of the trap formation was estimated. The k’ is the parameter which reflects the durability of each molecule and would be used as the guideline for the selection of the appropriate material in OFETs.