[20a-D103-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[20a-D103-5] Carbon-related defects in SiO₂: Determination of defect structures and electronic states

〇Yuichiro Matsushita¹, Atsushi Oshiyama¹ (1.The Univ. of Tokyo)

Keywords:SiC, SiO2, defects

In this study, we determined the carbon-related defect structures and its electronic states on the basis of the Density-functional theory. Consequently, we have found that the stability of the carbon-related defects strongly depends on the chemical potential of O₂ and the atomic density of SiO₂.