[20a-D104-1~11] 10.4 半導体スピントロニクス・超伝導・強相関

▲ [20a-D104-1] Effect of Be Doping on the Electronic Structure of n-Type Ferromagnetic Semiconductor (In,Fe)As

〇MASAKI KOBAYASHI^1,2、HISAO KIUCHI²、HIDEHARU NIWA²、JUN MIYAWAKI³、ATSUSHI FUJIMORI⁴、LE DUC ANH²、PHAM NAM HAI^1,2,5、MASAAKI TANAKA^1,2、MASAHARU OSHIMA²、YOSHIHISA HARADA³ (1.CSRN, Univ. of Tokyo、2.Grad. Sch. Eng., Univ. of Tokyo、3.ISSP, Univ. of Tokyo、4.Dep. Phys., Univ. of Tokyo、5.Tokyo Tech.)

キーワード：Ferromagnetic semiconductor, Electronic structure, Resonant inelastic x-ray scattering

n-type ferromagnetic semiconductor (In,Fe)As:Be shows ferromagnetic property depending on carrier concentration, where the Be dopants act as double donor. In this work, to investigate the effects of Be doping on the electronic structure of (In,Fe)As, we have performed resonant inelastic X-ray scattering (RIXS) measurements on (In,Fe)As:Be thin films. There are clear differences of the Fe 3d RIXS spectra between (In,Fe)As thin films with and without Be doping, although the Be concentration proportional to the carrier concentration is of the order of 10¹⁹ cm^-3. This result suggests that the Be doping not only provides carriers to (In,Fe)As, but also strengthens the hybridization between the Fe 3d and the InAs bands.