[20a-D104-1~11] 10.4 半導体スピントロニクス・超伝導・強相関

▲ [20a-D104-11] Injection current dependence of spin signals in non-degenerate n-Si

〇(M2)Soobeom Lee¹、Fabien Rortais¹、Yuichiro Ando¹、Shinji Miwa²、Yoshishige Suzuki²、Hayato Koike³、Masashi Shiraishi¹ (1.Kyoto Univ.、2.Osaka Univ.、3.TDK Corp.)

キーワード：Spintronics, Spin injection, Silicon

Si has a weak spin orbit interaction and spatial inversion symmetry of crystal, resulting in good spin coherence. Recent achievements in spintronic applications, such as room temperature (RT) operation of spin metal-oxide-semiconductor field-effect transistor and output spin voltage of more than 1 mV at RT due to the spin drift effect, have been reported by using non-degenerate (ND) Si. In our previous presentation, the spin signals exhibited saturation under a high electric current (Iinj) injection regime, suggesting a possibility of modification of spin transport properties in the ND Si. In this study, we investigate an origin of the Iinj dependence of spin signals in ND Si to obtain further understandings.